IRF7204TRPBF

Teknik Özellikler

Drainsource On Resistancemax

0.06 Ω

Turn Off Delay Time

100 ns

Gate Charge Qg Max Vgs

25nC @ 10V

Voltage Rated Dc

-20V

Yayın Yılı

1997

Terminal Kaplaması

MATTE TIN

Montaj

Surface Mount

RoHS Durumu

ROHS3 Compliant

Drain To Source Voltage Vdss

20V

Number Of Elements

1

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Breakdown Voltage

-20V

Fall Time Typ

68 ns

Tepe Reflow Süresi (maks. sn)

30

Uzunluk

4.9784mm

Kurşunsuz Kodu

Yes

Package Style

SMALL OUTLINE

Reach Svhc

No SVHC

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Fabrika Tedarik Süresi

12 Weeks

REACH Uyumluluk Kodu

compliant

Seri

HEXFET®

HTS Kodu

8541.29.00.95

Nominal Vgs

-2.5 V

Terminal Pozisyonu

DUAL

Montaj Tipi

Surface Mount

Genişlik

3.9878mm

Exterior Housing Material

1

Polaritychannel Type

P-CHANNEL

JESD-609 Kodu

e3

Turn On Delay Time

14 ns

Recovery Time

100 ns

Transistor Application

SWITCHING

Terminal Sayısı

8

Current Continuous Drain Id25

5.3A Ta

Fet Type

P-Channel

Parça Durumu

Active

Continuous Drain Current Id

-5.3A

Gate To Source Voltage Vgs

12V