IRF540NLPBF

Teknik Özellikler

Jesd30 Code

R-PSIP-T3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Sayısı

3

Threshold Voltage

4V

Nominal Vgs

4 V

Çalışma Sıcaklığı

-55°C~175°C TJ

Description

DC-DC boost converter (10...32/ 12...35 V)

Terminal Formu

THROUGH-HOLE

Saturation Current

1

Package Shape

RECTANGULAR

Module Type

DC-DC boost

Case Connection

DRAIN

Genişlik

56.5 mm

Yayın Yılı

2004

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Fet Type

N-Channel

Vgs Max

±20V

Rds On Max Id Vgs

44m Ω @ 16A, 10V

Tepe Reflow Sıcaklığı (°C)

260

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Jedec95 Code

TO-262AA

Package Body Material

PLASTIC/EPOXY

Radyasyon Dayanımı

No

Rise Time

35ns

Parça Durumu

Not For New Designs

Kurşunsuz

Lead Free

Power Dissipationmax Abs

130 W

Seri

HEXFET®

Drain To Source Breakdown Voltage

100V

Current Continuous Drain Id25

33A Tc

Tepe Reflow Süresi (maks. sn)

30

Vgsth Max Id

4V @ 250μA

Output Current

10 A

Montaj

Through Hole

Pulsed Drain Currentmax Idm

110 A

Turn On Delay Time

11 ns

Kılıf / Paket

TO-262-3 Long Leads, I2Pak, TO-262AA

Maximum Current

input - 16/ output - 10 A

Package Description

IN-LINE, R-PSIP-T3

Polaritychannel Type

N-CHANNEL