IRF5305PBF

Teknik Özellikler

Tepe Reflow Süresi (maks. sn)

30

Pin Sayısı

3

Current Continuous Drain Id25

31A Tc

Recovery Time

110 ns

Max Junction Temperature Tj

175°C

Montaj Tipi

Through Hole

Montaj

Through Hole

Avalanche Energy Rating Eas

280 mJ

Vgsth Max Id

4V @ 250μA

Ambalaj

Tube

Terminal Pozisyonu

SINGLE

Power Dissipation

110W

Drain To Source Breakdown Voltage

-55V

Terminal

Through Hole

Seri

HEXFET®

HTS Kodu

8541.29.00.95

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Contains Lead, Lead Free

Parça Durumu

Active

Operating Temperaturemax

175 °C

Pin Sayısı

3

Number Of Channels

1

Power Dissipation Max

110W Tc

Direnç

60mOhm

Power Dissipationmax Abs

110 W

Voltage Rated Dc

-55V

Package Body Material

PLASTIC/EPOXY

Radyasyon Dayanımı

No

Jedec95 Code

TO-220AB

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Rise Time

66ns

Contact Plating

Tin

Yükseklik

19.3mm

Drainsource On Resistancemax

0.06 Ω

Drain Currentmax Id

31 A

Drain To Source Voltage Vdss

55V

Operating Mode

ENHANCEMENT MODE

Element Configuration

Single

Reach Svhc

No SVHC

Gate To Source Voltage Vgs

20V