IR2130JPBF

Teknik Özellikler

Gate Type

IGBT, N-Channel MOSFET

Temel Ürün No

Z86E8316

Besleme Gerilimi

15V

JESD-609 Kodu

e3

Core Processor

Z8

Radyasyon Dayanımı

No

Channel Type

3-Phase

Turn On Time

0.85 μs

Max Power Dissipation

2W

Genişlik

16.66mm

Max Output Current

500mA

Fabrika Tedarik Süresi

18 Weeks

Besleme Gerilimi

10 V ~ 20 V

Oscillator Type

Internal

Fall Time Typ

35 ns

Montaj Tipi

Surface Mount

Max Junction Temperature Tj

150°C

Turn Off Time

0.55 μs

ECCN Kodu

EAR99

Parça Durumu

Active

Output Peak Current Limitnom

0.5A

Paket

Tape & Reel (TR)

Yükseklik

4.57mm

Driver Configuration

Half-Bridge

Lead Free Status Rohs Status

Lead free / RoHS Compliant

Turn Off Delay Time

35 ns

Core Size

8-Bit

High Side Driver

YES

Peripherals

POR, WDT

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

S-PQCC-J32

Reach Svhc

No SVHC

Direnç

75Ohm

High Side Voltage Max Bootstrap

600V

Nem Hassasiyeti (MSL)

3 (168 Hours)

Program Memory Size

4KB (4K x 8)

HTS Kodu

8542.39.00.01

Nominal Supply Current

3mA

Voltage Supply Vccvdd

3.5V ~ 5.5V

Kılıf / Paket

28-SOIC (0.295, 7.50mm Width)