21300-008147 NIBP HOSES

Teknik Özellikler

Qg Gate Charge

9.8 nC

Id Continuous Drain Current

2.9 A

Vds Drainsource Breakdown Voltage

30 V

Pd Power Dissipation

1.25 W

Vgs Th Gatesource Threshold Voltage

2.1 V

Configuration

Single

Birim Ağırlık

0.000282 oz

Fabrika Paket Adedi

12000

Rds On Drainsource Resistance

110 mOhms

Ürün Tipi

MOSFET

Minimum Operating Temperature

- 55 C

Technology

Si

Vgs Gatesource Voltage

- 20 V, + 20 V

Typical Turnoff Delay Time

25 ns

Number Of Channels

1 Channel

Seri

*

Typical Turnon Delay Time

5 ns

Kılıf / Paket

SOT-23-3

Ürün Durumu

Active

Channel Mode

Enhancement

Montaj Stili

SMD/SMT

Maks. Çalışma Sıcaklığı

+ 150 C

Rise Time

30 ns

Transistor Type

1 P-Channel

RoHS

Details

Paket

Retail Package

Ambalaj

Reel

Transistor Polarity

P-Channel