PTFA092213ELV4R250XTMA1

Teknik Özellikler

Typical Drain Efficiency

29

Maximum Drain Source Voltage V

65

Maximum Gate Source Voltage V

12

Minimum Frequency Mhz

920

Maximum Frequency Mhz

960

Process Technology

LDMOS

Configuration

Single

Channel Type

N

Maximum Drain Source Resistance Mohm

40(Typ)@10V

Channel Mode

Enhancement

Typical Power Gain Db

17.5

Mode Of Operation

CW|2-Carrier W-CDMA

Ambalaj

Tape and Reel

Maximum Operating Temperature C

200

RoHS Durumu

RoHS Compliant

Minimum Operating Temperature C

-40

Number Of Elements Per Chip

1

Eccn Us

EAR99

Military

No

Output Power W

220

Maximum Vswr

10