IRFZ24NS

Teknik Özellikler

Saturation Current

1

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material

SILICON

JESD-609 Kodu

e0

Yüzey Montaj

YES

Terminal Formu

GULL WING

Part Life Cycle Code

Obsolete

Number Of Terminals

2

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Operating Temperaturemax

175 °C

Rohs Code

No

Jedec95 Code

TO-263AB

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Avalanche Energy Rating Eas

71 mJ

HTS Kodu

8541.29.00.95

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY

Package Style

SMALL OUTLINE

Configuration

SINGLE WITH BUILT-IN DIODE

Exterior Housing Material

1

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Power Dissipation Ambientmax

45 W

Transistor Application

SWITCHING

Drain Currentmax Id

17 A

Ds Breakdown Voltagemin

55 V

Package Description

PLASTIC, D2PAK-3

Operating Mode

ENHANCEMENT MODE

Qualification Status

Not Qualified

Terminal Pozisyonu

SINGLE

Case Connection

DRAIN

Polaritychannel Type

N-CHANNEL

Jesd30 Code

R-PSSO-G2

Package Shape

RECTANGULAR

Pulsed Drain Currentmax Idm

68 A

Package Body Material

PLASTIC/EPOXY

REACH Uyumluluk Kodu

not_compliant

Terminal Kaplaması

Tin/Lead (Sn/Pb)

ECCN Kodu

EAR99

Drainsource On Resistancemax

0.07 Ω