IMW65R048M1H

Teknik Özellikler

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

ECCN Kodu

EAR99

Ds Breakdown Voltagemin

650 V

Transistor Application

SWITCHING

Terminal Formu

THROUGH-HOLE

Package Body Material

PLASTIC/EPOXY

Date Of Intro

2019-12-16

REACH Uyumluluk Kodu

compliant

Yüzey Montaj

NO

Drain Currentmax Id

39 A

Configuration

SINGLE WITH BUILT-IN DIODE

Part Life Cycle Code

Active

Transistor Element Material

SILICON CARBIDE

Number Of Terminals

3

JESD-609 Kodu

e3

Exterior Housing Material

1

Power Dissipationmax Abs

125 W

Terminal Kaplaması

Tin (Sn)

Terminal Pozisyonu

SINGLE

Package Shape

RECTANGULAR

Drainsource On Resistancemax

0.064 Ω

Operating Mode

ENHANCEMENT MODE

Operating Temperaturemax

150 °C

Polaritychannel Type

N-CHANNEL

Pulsed Drain Currentmax Idm

100 A

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Jesd30 Code

R-PSFM-T3

Operating Temperaturemin

-55 °C

Feedback Capmax Crss

13 pF

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Rohs Code

Yes

Package Style

FLANGE MOUNT

Case Connection

DRAIN

Avalanche Energy Rating Eas

171 mJ

Jedec95 Code

TO-247

Additional Feature

HIGH RELIABILITY