BSC072N03LD G

Teknik Özellikler

Number Of Terminals

6

Terminal Formu

FLAT

Transistor Element Material

SILICON

REACH Uyumluluk Kodu

not_compliant

Yüzey Montaj

YES

Nem Hassasiyeti (MSL)

1 (Unlimited)

Jesd30 Code

R-PDSO-F6

Tepe Reflow Sıcaklığı (°C)

260

Transistor Application

SWITCHING

Tepe Reflow Süresi (maks. sn)

40

Terminal Pozisyonu

DUAL

Terminal Kaplaması

Matte Tin (Sn)

Power Dissipationmax Abs

57W

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Avalanche Energy Rating Eas

90 mJ

Pin Sayısı

8

ECCN Kodu

EAR99

RoHS Durumu

RoHS Compliant

Number Of Elements

2

Polaritychannel Type

N-CHANNEL

Kurşunsuz Kodu

icon-pbfree yes

Operating Mode

ENHANCEMENT MODE

Ds Breakdown Voltagemin

30V

Pulsed Drain Currentmax Idm

80A

Drainsource On Resistancemax

0.0094Ohm

JESD-609 Kodu

e3

Drain Currentmax Abs Id

20A

Additional Feature

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Qualification Status

Not Qualified

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Case Connection

DRAIN

Operating Temperature Max

150°C