IRL6372TRPBF

Teknik Özellikler

Terminal Kaplaması

Matte Tin (Sn)

Radyasyon Dayanımı

No

Drain To Source Voltage Vdss

30V

JESD-609 Kodu

e3

Element Configuration

Dual

Gate Charge Qg Max Vgs

11nC @ 4.5V

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tape & Reel (TR)

Fall Time Typ

15 ns

Terminal Formu

GULL WING

Transistor Application

SWITCHING

Gate To Source Voltage Vgs

12V

Çalışma Sıcaklığı

-55°C~150°C TJ

ECCN Kodu

EAR99

Drain To Source Breakdown Voltage

30V

Fet Type

2 N-Channel (Dual)

Nominal Vgs

1.1 V

Rds On Max Id Vgs

17.9m Ω @ 8.1A, 4.5V

Turn Off Delay Time

34 ns

Terminal Sayısı

8

Input Capacitance Ciss Max Vds

1020pF @ 25V

Continuous Drain Current Id

8.1A

Transistor Element Material

SILICON

Reach Svhc

No SVHC

Temel Parça No

IRL6372PBF

Power Dissipation

2W

Montaj Tipi

Surface Mount

Kurşunsuz

Lead Free

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Rise Time

13ns

Max Power Dissipation

2W

RoHS Durumu

ROHS3 Compliant

Pin Sayısı

8

Fabrika Tedarik Süresi

15 Weeks

Number Of Elements

2

Additional Feature

HIGH RELIABILITY

Vgsth Max Id

1.1V @ 10μA

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Pulsed Drain Currentmax Idm

65A

Parça Durumu

Not For New Designs