IRL6372PBF

Teknik Özellikler

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Max Power Dissipation

2W

Kurşunsuz

Lead Free

Additional Feature

HIGH RELIABILITY

Pin Sayısı

8

Parça Durumu

Discontinued

Montaj

Surface Mount

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Turn On Delay Time

5.9 ns

Recovery Time

20 ns

Seri

HEXFET®

Nem Hassasiyeti (MSL)

1 (Unlimited)

JESD-609 Kodu

e3

Drain To Source Voltage Vdss

30V

Drain To Source Breakdown Voltage

30V

Terminal Formu

GULL WING

Transistor Application

SWITCHING

Threshold Voltage

1.1V

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Continuous Drain Current Id

8.1A

Nominal Vgs

1.1 V

Terminal Sayısı

8

Uzunluk

5mm

Rds On Max Id Vgs

17.9m Ω @ 8.1A, 4.5V

Turn Off Delay Time

34 ns

Montaj Tipi

Surface Mount

Rise Time

13ns

Power Dissipation

2W

Temel Parça No

IRL6372PBF

Number Of Elements

2

RoHS Durumu

ROHS3 Compliant

Yükseklik

1.5mm

Vgsth Max Id

1.1V @ 10μA

Pulsed Drain Currentmax Idm

65A

Qualification Status

Not Qualified

Direnç

17.9MOhm

Fet Feature

Logic Level Gate

Yayın Yılı

2011

Tepe Reflow Süresi (maks. sn)

30