IRG7PH42UD2PBF

Teknik Özellikler

Gate Charge

234nC

Çalışma Sıcaklığı

-55°C~150°C TJ

Transistor Application

POWER CONTROL

Giriş Tipi

Standard

Test Conditions

600V, 30A, 10 Ω, 15V

Vceon Max Vge Ic

2.02V @ 15V, 30A

Switching Energy

1.32mJ (off)

Fall Timemax Tf

85ns

Ambalaj

Tube

Element Configuration

Single

Nem Hassasiyeti (MSL)

1 (Unlimited)

Max Collector Current

60A

Igbt Type

Trench

RoHS Durumu

RoHS Compliant

Montaj Tipi

Through Hole

Pin Sayısı

3

Transistor Element Material

SILICON

Terminal Kaplaması

MATTE TIN OVER NICKEL

Tepe Reflow Süresi (maks. sn)

30

Turn Off Timenom Toff

470 ns

Qualification Status

Not Qualified

Collectoremitter Breakdown Voltage

1.2kV

Power Max

321W

Gateemitter Thr Voltagemax

6V

Terminal Sayısı

3

Tepe Reflow Sıcaklığı (°C)

250

Temel Parça No

IRG7PH42

Polaritychannel Type

N-CHANNEL

Number Of Elements

1

Montaj

Through Hole

Td Onoff25c

-/233ns

Max Power Dissipation

321W

Yayın Yılı

2009

Current Collector Pulsed Icm

90A

Voltage Collector Emitter Breakdown Max

1200V

Jedec95 Code

TO-247AC

JESD-609 Kodu

e3

ECCN Kodu

EAR99

Case Connection

COLLECTOR

Kılıf / Paket

TO-247-3