Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Max Power Dissipation
- 321W
- Td Onoff25c
- -/233ns
- Montaj
- Through Hole
- Number Of Elements
- 1
- Polaritychannel Type
- N-CHANNEL
- Temel Parça No
- IRG7PH42
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Terminal Sayısı
- 3
- Parça Durumu
- Obsolete
- Collector Emitter Voltage Vceo
- 2.02V
- Kılıf / Paket
- TO-247-3
- Case Connection
- COLLECTOR
- ECCN Kodu
- EAR99
- JESD-609 Kodu
- e3
- Jedec95 Code
- TO-247AD
- Voltage Collector Emitter Breakdown Max
- 1200V
- Current Collector Pulsed Icm
- 90A
- Yayın Yılı
- 2014
- Igbt Type
- Trench
- Max Collector Current
- 60A
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Element Configuration
- Single
- Ambalaj
- Tube
- Switching Energy
- 1.32mJ (off)
- Vceon Max Vge Ic
- 2.02V @ 15V, 30A
- Giriş Tipi
- Standard
- Test Conditions
- 600V, 30A, 10 Ω, 15V
- Transistor Application
- POWER CONTROL
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Gate Charge
- 234nC
- Power Max
- 321W
- Collectoremitter Breakdown Voltage
- 1.2kV
- Qualification Status
- Not Qualified
- Turn Off Timenom Toff
- 470 ns
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Terminal Kaplaması
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Jesd30 Code
- R-PSFM-T3
- Transistor Element Material
- SILICON
- RoHS Durumu
- RoHS Compliant
- Montaj Tipi
- Through Hole
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