IRG4IBC10UD

Teknik Özellikler

Ambalaj

Tube

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate Charge

15nC

Çalışma Sıcaklığı

-55°C~150°C TJ

Test Conditions

480V, 5A, 100 Ω, 15V

Giriş Tipi

Standard

Transistor Application

POWER CONTROL

Reverse Recovery Time

28ns

Terminal Pozisyonu

SINGLE

Vceon Max Vge Ic

2.6V @ 15V, 5A

Switching Energy

140μJ (on), 120μJ (off)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Turn Off Timenom Toff

345 ns

Qualification Status

Not Qualified

Power Max

25W

Montaj Tipi

Through Hole

RoHS Durumu

Non-RoHS Compliant

Currentcollector Ic Max

6.8A

Transistor Element Material

SILICON

Jesd30 Code

R-PSFM-T3

Polaritychannel Type

N-CHANNEL

Number Of Elements

1

Td Onoff25c

40ns/87ns

Additional Feature

ULTRA FAST

Terminal Sayısı

3

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Case Connection

ISOLATED

Kılıf / Paket

TO-220-3 Full Pack

Parça Durumu

Obsolete

Configuration

SINGLE WITH BUILT-IN DIODE

Current Collector Pulsed Icm

27A

Yayın Yılı

1999

Yüzey Montaj

NO

Jedec95 Code

TO-220AB

Voltage Collector Emitter Breakdown Max

600V

Turn On Time

56 ns