IRG4BC30KD-STRR

Teknik Özellikler

Yüzey Montaj

YES

Terminal Formu

GULL WING

Gate Charge

67nC

Transistor Element Material

SILICON

JESD-609 Kodu

e3

Power Max

100W

Tepe Reflow Süresi (maks. sn)

30

Current Collector Pulsed Icm

58A

Çalışma Sıcaklığı

-55°C~150°C TJ

Currentcollector Ic Max

28A

Giriş Tipi

Standard

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Parça Durumu

Obsolete

RoHS Durumu

Non-RoHS Compliant

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj Tipi

Surface Mount

Configuration

SINGLE WITH BUILT-IN DIODE

Additional Feature

LOW CONDUCTION LOSS

Td Onoff25c

60ns/160ns

Switching Energy

600μJ (on), 580μJ (off)

Power Dissipationmax Abs

100W

Fall Timemax Tf

120ns

Ambalaj

Tape & Reel (TR)

Vceon Max Vge Ic

2.7V @ 15V, 16A

Transistor Application

MOTOR CONTROL

Voltage Collector Emitter Breakdown Max

600V

Test Conditions

480V, 16A, 23 Ω, 15V

Tepe Reflow Sıcaklığı (°C)

260

Terminal Sayısı

2

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Gateemitter Voltagemax

20V

Number Of Elements

1

Turn Off Timenom Toff

370 ns

Reverse Recovery Time

42ns

Case Connection

COLLECTOR

Terminal Pozisyonu

SINGLE

Yayın Yılı

2000

Qualification Status

Not Qualified

Turn On Time

100 ns

Polaritychannel Type

N-CHANNEL