IRG4BC30FDSTRRP

Teknik Özellikler

Max Collector Current

31A

Terminal Sayısı

2

Test Conditions

480V, 17A, 23 Ω, 15V

Tepe Reflow Sıcaklığı (°C)

260

Vceon Max Vge Ic

1.8V @ 15V, 17A

Transistor Application

POWER CONTROL

Weight

260.39037mg

Ambalaj

Tape & Reel (TR)

Switching Energy

630μJ (on), 1.39mJ (off)

Td Onoff25c

42ns/230ns

Max Power Dissipation

100W

Element Configuration

Single

Pin Sayısı

3

Gateemitter Thr Voltagemax

6V

Turn On Time

69 ns

Polaritychannel Type

N-CHANNEL

Jesd30 Code

R-PSSO-G2

Case Connection

COLLECTOR

Reverse Recovery Time

42 ns

Collector Emitter Voltage Vceo

1.8V

Turn Off Timenom Toff

620 ns

Yayın Yılı

2004

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Number Of Elements

1

Gateemitter Voltagemax

20V

Giriş Tipi

Standard

Radyasyon Dayanımı

No

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Çalışma Sıcaklığı

-55°C~150°C TJ

Fabrika Tedarik Süresi

13 Weeks

Collectoremitter Breakdown Voltage

600V

Current Collector Pulsed Icm

120A

Power Max

100W

Tepe Reflow Süresi (maks. sn)

30

Terminal Formu

GULL WING

Gate Charge

51nC

JESD-609 Kodu

e3

Transistor Element Material

SILICON

Montaj Tipi

Surface Mount

Nem Hassasiyeti (MSL)

1 (Unlimited)