IRG4BC20SD

Teknik Özellikler

Test Conditions

480V, 10A, 50 Ω, 15V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Sayısı

3

Switching Energy

320μJ (on), 2.58mJ (off)

Td Onoff25c

62ns/690ns

Ambalaj

Tube

Voltage Collector Emitter Breakdown Max

600V

Transistor Application

POWER CONTROL

Vceon Max Vge Ic

1.6V @ 15V, 10A

Qualification Status

Not Qualified

Yayın Yılı

1997

Terminal Pozisyonu

SINGLE

Turn Off Timenom Toff

1780 ns

Case Connection

COLLECTOR

Reverse Recovery Time

37ns

Turn On Time

99 ns

Polaritychannel Type

N-CHANNEL

Jesd30 Code

R-PSFM-T3

Number Of Elements

1

Currentcollector Ic Max

19A

Çalışma Sıcaklığı

-55°C~150°C TJ

Kılıf / Paket

TO-220-3

Giriş Tipi

Standard

Transistor Element Material

SILICON

Yüzey Montaj

NO

Gate Charge

27nC

Current Collector Pulsed Icm

38A

Power Max

60W

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Jedec95 Code

TO-220AB

RoHS Durumu

Non-RoHS Compliant

Nem Hassasiyeti (MSL)

1 (Unlimited)

Additional Feature

ULTRA FAST SOFT RECOVERY

Montaj Tipi

Through Hole

Configuration

SINGLE WITH BUILT-IN DIODE

Parça Durumu

Obsolete