IRG4BC10SD

Teknik Özellikler

Currentcollector Ic Max

14A

Çalışma Sıcaklığı

-55°C~150°C TJ

Kılıf / Paket

TO-220-3

Giriş Tipi

Standard

Transistor Element Material

SILICON

JESD-609 Kodu

e3

Gate Charge

15nC

Terminal Formu

GULL WING

Yüzey Montaj

YES

Current Collector Pulsed Icm

18A

Tepe Reflow Süresi (maks. sn)

30

Power Max

38W

RoHS Durumu

Non-RoHS Compliant

Nem Hassasiyeti (MSL)

1 (Unlimited)

Additional Feature

LOW CONDUCTION LOSS

Configuration

SINGLE WITH BUILT-IN DIODE

Montaj Tipi

Through Hole

Parça Durumu

Obsolete

Test Conditions

480V, 8A, 100 Ω, 15V

Tepe Reflow Sıcaklığı (°C)

260

Terminal Sayısı

2

Td Onoff25c

76ns/815ns

Switching Energy

310μJ (on), 3.28mJ (off)

Ambalaj

Tube

Voltage Collector Emitter Breakdown Max

600V

Transistor Application

POWER CONTROL

Vceon Max Vge Ic

1.8V @ 15V, 8A

Terminal Pozisyonu

SINGLE

Yayın Yılı

2000

Qualification Status

Not Qualified

Turn Off Timenom Toff

1780 ns

Reverse Recovery Time

28ns

Case Connection

COLLECTOR

Turn On Time

106 ns

Polaritychannel Type

N-CHANNEL

Jesd30 Code

R-PSSO-G2

Number Of Elements

1

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

ECCN Kodu

EAR99