IRG4BC10S

Teknik Özellikler

Configuration

SINGLE WITH BUILT-IN DIODE

Montaj Tipi

Through Hole

Additional Feature

LOW CONDUCTION LOSS

Nem Hassasiyeti (MSL)

1 (Unlimited)

RoHS Durumu

Non-RoHS Compliant

Parça Durumu

Obsolete

Giriş Tipi

Standard

Kılıf / Paket

TO-220-3

Currentcollector Ic Max

14A

Çalışma Sıcaklığı

-55°C~150°C TJ

Power Max

38W

Tepe Reflow Süresi (maks. sn)

30

Current Collector Pulsed Icm

18A

Gate Charge

15nC

Terminal Formu

GULL WING

Yüzey Montaj

YES

Transistor Element Material

SILICON

JESD-609 Kodu

e3

Jesd30 Code

R-PSSO-G2

Polaritychannel Type

N-CHANNEL

Turn On Time

106 ns

Case Connection

COLLECTOR

Turn Off Timenom Toff

1780 ns

Terminal Pozisyonu

SINGLE

Yayın Yılı

2007

Qualification Status

Not Qualified

ECCN Kodu

EAR99

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Number Of Elements

1

Terminal Sayısı

2

Test Conditions

480V, 8A, 100 Ω, 15V

Tepe Reflow Sıcaklığı (°C)

260

Vceon Max Vge Ic

1.8V @ 15V, 8A

Voltage Collector Emitter Breakdown Max

600V

Transistor Application

POWER CONTROL

Ambalaj

Tube

Switching Energy

140μJ (on), 2.58mJ (off)

Td Onoff25c

25ns/630ns