IRFI4019HG-117P

Teknik Özellikler

Kılıf / Paket

TO-220-5 Full Pack (Formed Leads)

Transistor Element Material

SILICON

Power Dissipation

18W

ECCN Kodu

EAR99

Vgsth Max Id

4.9V @ 50μA

Operating Mode

ENHANCEMENT MODE

Drain To Source Voltage Vdss

150V

Turn On Delay Time

7 ns

Pin Sayısı

5

Gate Charge Qg Max Vgs

20nC @ 10V

RoHS Durumu

RoHS Compliant

Radyasyon Dayanımı

No

Drain To Source Breakdown Voltage

150V

Rds On Max Id Vgs

95m Ω @ 5.2A, 10V

Additional Feature

HIGH RELIABILITY

Case Connection

ISOLATED

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Terminal Pozisyonu

SINGLE

Input Capacitance Ciss Max Vds

810pF @ 25V

Pulsed Drain Currentmax Idm

34A

Number Of Elements

2

Max Power Dissipation

18W

Ambalaj

Tube

Parça Durumu

Obsolete

Transistor Application

SWITCHING

Montaj

Through Hole

Fet Type

2 N-Channel (Dual)

Terminal Sayısı

5

Gate To Source Voltage Vgs

20V

Rise Time

6.6ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Avalanche Energy Rating Eas

77 mJ

Continuous Drain Current Id

8.7A

Fall Time Typ

3.1 ns

Montaj Tipi

Through Hole

Yayın Yılı

2009

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fet Feature

Standard

Element Configuration

Dual

Turn Off Delay Time

13 ns