IRFHM8363TRPBF

Teknik Özellikler

Threshold Voltage

1.8V

Transistor Element Material

SILICON

Kılıf / Paket

8-PowerVDFN

JESD-609 Kodu

e3

Seri

HEXFET®

Power Dissipation

2.7W

Vgsth Max Id

2.35V @ 25μA

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Drain To Source Voltage Vdss

30V

Gate Charge Qg Max Vgs

15nC @ 10V

Terminal Kaplaması

Matte Tin (Sn)

Turn On Delay Time

14 ns

Pin Sayısı

8

RoHS Durumu

ROHS3 Compliant

Radyasyon Dayanımı

No

Drain To Source Breakdown Voltage

30V

Rds On Max Id Vgs

14.9m Ω @ 10A, 10V

Case Connection

DRAIN

Additional Feature

HIGH RELIABILITY

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Input Capacitance Ciss Max Vds

1165pF @ 10V

Number Of Elements

2

Max Power Dissipation

2.7W

Pulsed Drain Currentmax Idm

116A

Reach Svhc

No SVHC

Kurşunsuz

Lead Free

Parça Durumu

Not For New Designs

Ambalaj

Tape & Reel (TR)

Transistor Application

SWITCHING

Fet Type

2 N-Channel (Dual)

Terminal Sayısı

8

Montaj

Surface Mount

Gate To Source Voltage Vgs

20V

Rise Time

94ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Drainsource On Resistancemax

0.0149Ohm

Continuous Drain Current Id

11A

Fall Time Typ

33 ns

Montaj Tipi

Surface Mount