IRFHM792TRPBF

Teknik Özellikler

JESD-609 Kodu

e3

Transistor Element Material

SILICON

Kılıf / Paket

8-PowerVDFN

Power Dissipation

2.3W

Seri

HEXFET®

Gate Charge Qg Max Vgs

6.3nC @ 10V

Terminal Kaplaması

Matte Tin (Sn)

Turn On Delay Time

3.4 ns

Pin Sayısı

8

Operating Mode

ENHANCEMENT MODE

Drain To Source Voltage Vdss

100V

Vgsth Max Id

4V @ 10μA

ECCN Kodu

EAR99

Drain To Source Breakdown Voltage

100V

Rds On Max Id Vgs

195m Ω @ 2.9A, 10V

Radyasyon Dayanımı

No

RoHS Durumu

ROHS3 Compliant

Input Capacitance Ciss Max Vds

251pF @ 25V

Fabrika Tedarik Süresi

12 Weeks

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Case Connection

DRAIN

Transistor Application

SWITCHING

Ambalaj

Tape & Reel (TR)

Parça Durumu

Active

Kurşunsuz

Lead Free

Number Of Elements

2

Max Power Dissipation

2.3W

Pulsed Drain Currentmax Idm

14A

Continuous Drain Current Id

2.3A

Rise Time

4.7ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Drainsource On Resistancemax

0.195Ohm

Gate To Source Voltage Vgs

20V

Fet Type

2 N-Channel (Dual)

Terminal Sayısı

8

Montaj

Surface Mount

Turn Off Delay Time

5.2 ns

Drain Currentmax Abs Id

3.4A

Element Configuration

Dual

Fet Feature

Standard