IRFH7911TRPBF

Teknik Özellikler

Kılıf / Paket

18-PowerVQFN

Jesd30 Code

R-PQFP-N6

Direnç

8.6MOhm

Qualification Status

Not Qualified

Gate Charge Qg Max Vgs

12nC @ 4.5V

Vgsth Max Id

2.35V @ 25μA

Power Max

2.4W 3.4W

Uzunluk

5.9944mm

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Terminal Pozisyonu

QUAD

Parça Durumu

Not For New Designs

Ambalaj

Tape & Reel (TR)

Transistor Application

SWITCHING

Number Of Elements

2

Max Power Dissipation

3.4W

Kurşunsuz

Lead Free

Fet Type

2 N-Channel (Dual)

Nominal Vgs

2.35 V

Montaj Tipi

Surface Mount

Nem Hassasiyeti (MSL)

2 (1 Year)

Yayın Yılı

2011

Transistor Element Material

SILICON

JESD-609 Kodu

e3

Seri

HEXFET®

Power Dissipation

2.4W

Genişlik

5mm

Pin Sayısı

18

Terminal Kaplaması

Matte Tin (Sn)

ECCN Kodu

EAR99

Terminal Formu

NO LEAD

Operating Mode

ENHANCEMENT MODE

Rds On Max Id Vgs

8.6m Ω @ 12A, 10V

Drain To Source Breakdown Voltage

30V

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

13A 28A

Fabrika Tedarik Süresi

39 Weeks

Input Capacitance Ciss Max Vds

1060pF @ 15V

Additional Feature

HIGH RELIABILITY

Case Connection

DRAIN SOURCE

Pulsed Drain Currentmax Idm

100A