IRFH4251DTRPBF

Teknik Özellikler

Seri

FASTIRFET™

Genişlik

5mm

Transistor Element Material

SILICON

Kılıf / Paket

8-PowerVDFN

Threshold Voltage

1.6V

Radyasyon Dayanımı

No

Rds On Max Id Vgs

3.2m Ω @ 30A, 10V

Current Continuous Drain Id25

64A 188A

RoHS Durumu

ROHS3 Compliant

Gate Charge Qg Max Vgs

15nC @ 4.5V

Pin Sayısı

8

Vgsth Max Id

2.1V @ 35μA

Power Max

31W 63W

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Drain To Source Voltage Vdss

25V

Uzunluk

6mm

Ambalaj

Tape & Reel (TR)

Parça Durumu

Not For New Designs

Transistor Application

SWITCHING

Number Of Elements

2

Max Power Dissipation

63W

Reach Svhc

No SVHC

Kurşunsuz

Lead Free

Fabrika Tedarik Süresi

14 Weeks

Input Capacitance Ciss Max Vds

1314pF @ 13V

Case Connection

SOURCE

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Fet Feature

Logic Level Gate

Element Configuration

Dual

Drain Currentmax Abs Id

45A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2013

Montaj Tipi

Surface Mount

Çalışma Sıcaklığı

-55°C~150°C TJ

Avalanche Energy Rating Eas

61 mJ

Drainsource On Resistancemax

0.0046Ohm

Continuous Drain Current Id

188A

Yükseklik

900μm

Terminal Sayısı

8