IRF9953TRPBF

Teknik Özellikler

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Terminal Sayısı

8

Voltage Rated Dc

-30V

Çalışma Sıcaklığı

-55°C~150°C TJ

Gate Charge Qg Max Vgs

12nC @ 10V

Turn Off Delay Time

20 ns

Gate To Source Voltage Vgs

20V

Direnç

250mOhm

Input Capacitance Ciss Max Vds

190pF @ 15V

Terminal Formu

GULL WING

Drain To Source Breakdown Voltage

-30V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Elements

2

Ambalaj

Tape & Reel (TR)

Yayın Yılı

2004

Seri

HEXFET®

Akım Değeri

-2.3A

Vgsth Max Id

1V @ 250μA

Drain To Source Voltage Vdss

30V

Rds On Max Id Vgs

250m Ω @ 1A, 10V

Rise Time

14ns

Montaj

Surface Mount

Transistor Application

SWITCHING

Pin Sayısı

8

Continuous Drain Current Id

2.3A

Pulsed Drain Currentmax Idm

10A

Operating Mode

ENHANCEMENT MODE

Radyasyon Dayanımı

No

Temel Parça No

IRF9953PBF

Genişlik

3.9878mm

Kurşunsuz

Contains Lead, Lead Free

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Power Dissipation

2W

Fabrika Tedarik Süresi

12 Weeks

Fet Feature

Standard

Fall Time Typ

6.9 ns

Additional Feature

HIGH RELIABILITY

Parça Durumu

Active

Transistor Element Material

SILICON