IRF9389TRPBF

Teknik Özellikler

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Kurşunsuz

Lead Free

Genişlik

4mm

Power Dissipation

2W

ECCN Kodu

EAR99

Temel Parça No

IRF9389

Fet Feature

Logic Level Gate

Fall Time Typ

15 ns

Fabrika Tedarik Süresi

12 Weeks

Uzunluk

5mm

Transistor Element Material

SILICON

Parça Durumu

Active

Max Power Dissipation

2W

Yükseklik

1.5mm

Element Configuration

Dual

Fet Type

N and P-Channel

Montaj Tipi

Surface Mount

Turn Off Delay Time

17 ns

Gate Charge Qg Max Vgs

14nC @ 10V

Drain To Source Breakdown Voltage

30V

Terminal Formu

GULL WING

Input Capacitance Ciss Max Vds

398pF @ 15V

Gate To Source Voltage Vgs

20V

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Terminal Sayısı

8

Çalışma Sıcaklığı

-55°C~150°C TJ

Seri

HEXFET®

Yayın Yılı

2008

Threshold Voltage

1.8V

Vgsth Max Id

2.3V @ 10μA

Reach Svhc

No SVHC

Number Of Elements

2

Ambalaj

Tape & Reel (TR)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Pulsed Drain Currentmax Idm

34A

Continuous Drain Current Id

4.6A

Pin Sayısı

8

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Operating Mode

ENHANCEMENT MODE