IRF9362PBF

Teknik Özellikler

Uzunluk

4.9784mm

Avalanche Energy Rating Eas

94 mJ

Yükseklik

1.4986mm

Turn On Delay Time

5.2 ns

Element Configuration

Dual

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Power Dissipation

2W

Fet Feature

Logic Level Gate

Montaj

Surface Mount

Rise Time

5.9ns

Pin Sayısı

8

Continuous Drain Current Id

-8A

Operating Mode

ENHANCEMENT MODE

Drain Currentmax Abs Id

8A

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

8

Çalışma Sıcaklığı

-55°C~150°C TJ

Input Capacitance Ciss Max Vds

1300pF @ 25V

Terminal Formu

GULL WING

Gate To Source Voltage Vgs

20V

Reach Svhc

No SVHC

Nem Hassasiyeti (MSL)

1 (Unlimited)

Nominal Vgs

-1.8 V

Yayın Yılı

2004

Recovery Time

48 ns

Drain To Source Voltage Vdss

30V

Threshold Voltage

-1.8V

Transistor Element Material

SILICON

Parça Durumu

Discontinued

Fet Type

2 P-Channel (Dual)

Montaj Tipi

Surface Mount

Max Power Dissipation

2W

Temel Parça No

IRF9362PBF

Kurşunsuz

Lead Free

Genişlik

3.9878mm

ECCN Kodu

EAR99

Fall Time Typ

53 ns

Transistor Application

SWITCHING

Rds On Max Id Vgs

21m Ω @ 8A, 10V

Current Continuous Drain Id25

8A