IRF9358TRPBF

Teknik Özellikler

Fet Type

2 P-Channel (Dual)

Montaj Tipi

Surface Mount

Max Power Dissipation

2W

Parça Durumu

Active

Transistor Element Material

SILICON

Fabrika Tedarik Süresi

12 Weeks

Fall Time Typ

69 ns

Temel Parça No

IRF9358PBF

Genişlik

4mm

Drainsource On Resistancemax

0.0163Ohm

Kurşunsuz

Lead Free

ECCN Kodu

EAR99

Jedec95 Code

MS-012AA

Radyasyon Dayanımı

No

Rds On Max Id Vgs

16.3m Ω @ 9.2A, 10V

Transistor Application

SWITCHING

Pulsed Drain Currentmax Idm

73A

Number Of Elements

2

Ambalaj

Tape & Reel (TR)

Seri

HEXFET®

Vgsth Max Id

2.4V @ 25μA

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Gate Charge Qg Max Vgs

38nC @ 10V

Turn Off Delay Time

146 ns

Drain To Source Breakdown Voltage

-30V

Avalanche Energy Rating Eas

210 mJ

Yükseklik

1.5mm

Element Configuration

Dual

Turn On Delay Time

5.7 ns

Uzunluk

5mm

Fet Feature

Logic Level Gate

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Power Dissipation

2W

Montaj

Surface Mount

Rise Time

7.2ns

Pin Sayısı

8

Continuous Drain Current Id

9.2A

Operating Mode

ENHANCEMENT MODE

Reach Svhc

No SVHC

Nem Hassasiyeti (MSL)

1 (Unlimited)