IRF9358PBF

Teknik Özellikler

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Direnç

16.3MOhm

Drain To Source Breakdown Voltage

-30V

Turn Off Delay Time

146 ns

Gate Charge Qg Max Vgs

38nC @ 10V

Ambalaj

Tube

Number Of Elements

2

Vgsth Max Id

2.4V @ 25μA

Seri

HEXFET®

Rds On Max Id Vgs

16.3m Ω @ 9.2A, 10V

Transistor Application

SWITCHING

Pulsed Drain Currentmax Idm

73A

Radyasyon Dayanımı

No

Temel Parça No

IRF9358PBF

ECCN Kodu

EAR99

Genişlik

4mm

Kurşunsuz

Lead Free

Fall Time Typ

69 ns

Parça Durumu

Discontinued

Transistor Element Material

SILICON

Montaj Tipi

Surface Mount

Fet Type

2 P-Channel (Dual)

Max Power Dissipation

2W

Çalışma Sıcaklığı

-55°C~150°C TJ

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

8

Gate To Source Voltage Vgs

20V

Terminal Formu

GULL WING

Input Capacitance Ciss Max Vds

1740pF @ 25V

Terminal Kaplaması

Matte Tin (Sn)

Nem Hassasiyeti (MSL)

1 (Unlimited)

JESD-609 Kodu

e3

Reach Svhc

No SVHC

Drain To Source Voltage Vdss

30V

Recovery Time

83 ns

Yayın Yılı

2004

Nominal Vgs

-1.8 V

Rise Time

7.2ns

Montaj

Surface Mount

Operating Mode

ENHANCEMENT MODE