IRF8910PBF

Teknik Özellikler

Avalanche Energy Rating Eas

19 mJ

Fet Type

2 N-Channel (Dual)

Montaj Tipi

Surface Mount

Transistor Element Material

SILICON

Yüzey Montaj

YES

Parça Durumu

Discontinued

Fet Feature

Logic Level Gate

Power Max

2W

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drainsource On Resistancemax

0.0134Ohm

Jedec95 Code

MS-012AA

ECCN Kodu

EAR99

Temel Parça No

IRF8910PBF

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Drain Currentmax Abs Id

10A

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Pulsed Drain Currentmax Idm

82A

Operating Mode

ENHANCEMENT MODE

Qualification Status

Not Qualified

Ds Breakdown Voltagemin

20V

Transistor Application

SWITCHING

Current Continuous Drain Id25

10A

Rds On Max Id Vgs

13.4m Ω @ 10A, 10V

Seri

HEXFET®

Yayın Yılı

2004

Drain To Source Voltage Vdss

20V

Vgsth Max Id

2.55V @ 250μA

Jesd30 Code

R-PDSO-G8

Number Of Elements

2

Ambalaj

Tube

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate Charge Qg Max Vgs

11nC @ 4.5V

Terminal Formu

GULL WING

Input Capacitance Ciss Max Vds

960pF @ 10V

Terminal Sayısı

8

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-55°C~150°C TJ