IRF8910GTRPBF

Teknik Özellikler

Temel Parça No

IRF8910GPBF

Drainsource On Resistancemax

0.0134Ohm

Genişlik

3.9878mm

Fet Technology

METAL-OXIDE SEMICONDUCTOR

ECCN Kodu

EAR99

Jedec95 Code

MS-012AA

Power Dissipation

2W

Fet Feature

Logic Level Gate

Fall Time Typ

4.1 ns

Parça Durumu

Obsolete

Transistor Element Material

SILICON

Uzunluk

4.9784mm

Avalanche Energy Rating Eas

19 mJ

Fet Type

2 N-Channel (Dual)

Montaj Tipi

Surface Mount

Yükseklik

1.4986mm

Max Power Dissipation

2W

Element Configuration

Single

Turn On Delay Time

6.2 ns

Terminal Sayısı

8

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

RoHS Durumu

RoHS Compliant

Çalışma Sıcaklığı

-55°C~150°C TJ

Turn Off Delay Time

9.7 ns

Gate Charge Qg Max Vgs

11nC @ 4.5V

Gate To Source Voltage Vgs

20V

Input Capacitance Ciss Max Vds

960pF @ 10V

Terminal Formu

GULL WING

Drain To Source Breakdown Voltage

20V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

Yayın Yılı

2005

Seri

HEXFET®

Vgsth Max Id

2.55V @ 250μA

Montaj

Surface Mount

Rise Time

10ns

Rds On Max Id Vgs

13.4m Ω @ 10A, 10V

Transistor Application

SWITCHING

Continuous Drain Current Id

10A