IRF8313TRPBF

Teknik Özellikler

Radyasyon Dayanımı

No

Rds On Max Id Vgs

15.5m Ω @ 9.7A, 10V

Transistor Application

SWITCHING

Vgsth Max Id

2.35V @ 25μA

Seri

HEXFET®

Ambalaj

Tape & Reel (TR)

Number Of Elements

2

Direnç

15.5MOhm

Drain To Source Breakdown Voltage

30V

Gate Charge Qg Max Vgs

9nC @ 4.5V

Turn Off Delay Time

8.5 ns

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Max Power Dissipation

2W

Montaj Tipi

Surface Mount

Fet Type

2 N-Channel (Dual)

Parça Durumu

Not For New Designs

Transistor Element Material

SILICON

Fall Time Typ

4.2 ns

ECCN Kodu

EAR99

Kurşunsuz

Lead Free

Genişlik

3.9878mm

Temel Parça No

IRF8313PBF

Operating Mode

ENHANCEMENT MODE

Pin Sayısı

8

Continuous Drain Current Id

9.7A

Montaj

Surface Mount

Rise Time

9.9ns

Threshold Voltage

1.8V

Drain To Source Voltage Vdss

30V

Yayın Yılı

2008

Nominal Vgs

1.8 V

Nem Hassasiyeti (MSL)

1 (Unlimited)

JESD-609 Kodu

e3

Reach Svhc

No SVHC

Gate To Source Voltage Vgs

20V

Input Capacitance Ciss Max Vds

760pF @ 15V

Terminal Formu

GULL WING

Terminal Kaplaması

Matte Tin (Sn)

Çalışma Sıcaklığı

-55°C~175°C TJ

RoHS Durumu

ROHS3 Compliant