IRF7910TRPBF

Teknik Özellikler

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current Id

10A

Pin Sayısı

8

Montaj

Surface Mount

Rise Time

22ns

Rds On Max Id Vgs

15m Ω @ 8A, 4.5V

Transistor Application

SWITCHING

Kurşunsuz Kodu

yes

Contact Plating

Tin

Tepe Reflow Süresi (maks. sn)

30

Radyasyon Dayanımı

No

Direnç

15MOhm

Gate To Source Voltage Vgs

12V

Drain To Source Breakdown Voltage

12V

Terminal Formu

GULL WING

Input Capacitance Ciss Max Vds

1730pF @ 6V

Turn Off Delay Time

16 ns

Gate Charge Qg Max Vgs

26nC @ 4.5V

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Sayısı

8

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

RoHS Durumu

ROHS3 Compliant

Vgsth Max Id

2V @ 250μA

Yayın Yılı

2002

Seri

HEXFET®

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Elements

2

JESD-609 Kodu

e3

Ambalaj

Tape & Reel (TR)

Uzunluk

4.9784mm

Parça Durumu

Not For New Designs

Transistor Element Material

SILICON

Element Configuration

Single

Turn On Delay Time

9.4 ns

Yükseklik

1.4986mm

Max Power Dissipation

2W

Montaj Tipi

Surface Mount

Fet Type

2 N-Channel (Dual)

Jedec95 Code

MS-012AA

Power Dissipation

2W