IRF7910PBF

Teknik Özellikler

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current Id

10A

Pin Sayısı

8

Montaj

Surface Mount

Rise Time

22ns

Akım Değeri

10A

Threshold Voltage

2V

Yayın Yılı

2004

Nominal Vgs

2 V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Reach Svhc

No SVHC

Gate To Source Voltage Vgs

12V

Input Capacitance Ciss Max Vds

1730pF @ 6V

Terminal Formu

GULL WING

Voltage Rated Dc

12V

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Sayısı

8

RoHS Durumu

ROHS3 Compliant

Element Configuration

Dual

Turn On Delay Time

9.4 ns

Yükseklik

1.5mm

Uzunluk

5mm

Fet Feature

Logic Level Gate

Dual Supply Voltage

12V

Power Dissipation

2W

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Terminal

SMD/SMT

Radyasyon Dayanımı

No

Rds On Max Id Vgs

15m Ω @ 8A, 4.5V

Transistor Application

SWITCHING

Vgsth Max Id

2V @ 250μA

Seri

HEXFET®

Ambalaj

Tube

Number Of Elements

2

Drain To Source Breakdown Voltage

12V

Turn Off Delay Time

16 ns

Gate Charge Qg Max Vgs

26nC @ 4.5V

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Max Power Dissipation

2W

Montaj Tipi

Surface Mount