IRF7757TRPBF

Teknik Özellikler

Radyasyon Dayanımı

No

Terminal

SMD/SMT

Current Continuous Drain Id25

4.8A

Rds On Max Id Vgs

35mOhm @ 4.8A, 4.5V

Rise Time

9.2ns

Montaj

Surface Mount

Input Capacitance

1.34nF

Continuous Drain Current Id

4.8A

Pin Sayısı

8

Tedarikçi Cihaz Paketi

8-TSSOP

Reach Svhc

No SVHC

Rds On Max

35 mΩ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Elements

2

Ambalaj

Tape & Reel (TR)

Yayın Yılı

2005

Nominal Vgs

1.2 V

Seri

HEXFET®

Maks. Çalışma Sıcaklığı

150°C

Threshold Voltage

1.2V

Vgsth Max Id

1.2V @ 250μA

Drain To Source Voltage Vdss

20V

Kılıf / Paket

8-TSSOP (0.173, 4.40mm Width)

RoHS Durumu

RoHS Compliant

Çalışma Sıcaklığı

-55°C~150°C TJ

Turn Off Delay Time

36 ns

Gate Charge Qg Max Vgs

23nC @ 4.5V

Gate To Source Voltage Vgs

12V

Drain To Source Breakdown Voltage

20V

Input Capacitance Ciss Max Vds

1340pF @ 15V

Fet Type

2 N-Channel (Dual)

Montaj Tipi

Surface Mount

Max Power Dissipation

1.2W

Element Configuration

Dual

Turn On Delay Time

9.5 ns

Min. Çalışma Sıcaklığı

-55°C

Parça Durumu

Obsolete

Drain To Source Resistance

35mOhm

Dual Supply Voltage

20V

Power Max

1.2W