IRF7756TRPBF

Teknik Özellikler

Fet Feature

Logic Level Gate

Dual Supply Voltage

-12V

Power Max

1W

Kurşunsuz

Lead Free

Power Dissipation

1W

Temel Parça No

IRF7756PBF

Max Power Dissipation

1W

Min. Çalışma Sıcaklığı

-55°C

Element Configuration

Dual

Fet Type

2 P-Channel (Dual)

Montaj Tipi

Surface Mount

Drain To Source Resistance

40mOhm

Parça Durumu

Obsolete

Seri

HEXFET®

Nominal Vgs

-900 mV

Yayın Yılı

2009

Maks. Çalışma Sıcaklığı

150°C

Drain To Source Voltage Vdss

12V

Vgsth Max Id

900mV @ 250μA

Reach Svhc

No SVHC

Number Of Elements

2

Ambalaj

Tape & Reel (TR)

Rds On Max

40 mΩ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate Charge Qg Max Vgs

18nC @ 4.5V

Drain To Source Breakdown Voltage

-12V

Input Capacitance Ciss Max Vds

1400pF @ 10V

Gate To Source Voltage Vgs

8V

Kılıf / Paket

8-TSSOP (0.173, 4.40mm Width)

RoHS Durumu

RoHS Compliant

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal

SMD/SMT

Tedarikçi Cihaz Paketi

8-TSSOP

Pin Sayısı

8

Continuous Drain Current Id

-4.3A

Input Capacitance

1.4nF

Current Continuous Drain Id25

4.3A

Montaj

Surface Mount

Rds On Max Id Vgs

40mOhm @ 4.3A, 4.5V