IRF7756

Teknik Özellikler

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Drain To Source Breakdown Voltage

-12V

Ambalaj

Tube

ECCN Kodu

EAR99

Kılıf / Paket

8-TSSOP (0.173, 4.40mm Width)

Rds On Max Id Vgs

40m Ω @ 4.3A, 4.5V

Input Capacitance Ciss Max Vds

1400pF @ 10V

Seri

HEXFET®

Gate Charge Qg Max Vgs

18nC @ 4.5V

Drain To Source Voltage Vdss

12V

RoHS Durumu

Non-RoHS Compliant

Akım Değeri

-4.3A

Montaj

Surface Mount

Yayın Yılı

2004

Voltage Rated Dc

-12V

Operating Mode

ENHANCEMENT MODE

Pin Sayısı

8

Continuous Drain Current Id

4.3A

Fet Type

2 P-Channel (Dual)

Parça Durumu

Obsolete

Fet Feature

Logic Level Gate

Çalışma Sıcaklığı

-55°C~150°C TJ

Kurşunsuz

Contains Lead

Montaj Tipi

Surface Mount

Vgsth Max Id

900mV @ 250μA

Max Power Dissipation

1W