IRF7752GTRPBF

Teknik Özellikler

Element Configuration

Dual

Seri

HEXFET®

Input Capacitance Ciss Max Vds

861pF @ 25V

Rds On Max Id Vgs

30mOhm @ 4.6A, 10V

Reach Svhc

Unknown

Kılıf / Paket

8-TSSOP (0.173, 4.40mm Width)

Ambalaj

Tape & Reel (TR)

Maks. Çalışma Sıcaklığı

150°C

Drain To Source Breakdown Voltage

30V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Elements

2

Yayın Yılı

2009

Montaj

Surface Mount

Drain To Source Voltage Vdss

30V

RoHS Durumu

RoHS Compliant

Gate Charge Qg Max Vgs

9nC @ 4.5V

Input Capacitance

861pF

Power Max

1W

Tedarikçi Cihaz Paketi

8-TSSOP

Çalışma Sıcaklığı

-55°C~150°C TJ

Power Dissipation

1W

Fet Feature

Logic Level Gate

Parça Durumu

Obsolete

Fet Type

2 N-Channel (Dual)

Min. Çalışma Sıcaklığı

-55°C

Continuous Drain Current Id

4.6A

Gate To Source Voltage Vgs

12V

Rds On Max

30 mΩ

Current Continuous Drain Id25

4.6A

Pin Sayısı

8

Drain To Source Resistance

36mOhm

Max Power Dissipation

1W

Vgsth Max Id

2V @ 250μA

Montaj Tipi

Surface Mount

Nominal Vgs

2 V

Temel Parça No

IRF7752GPBF