IRF7530TRPBF

Teknik Özellikler

Avalanche Energy Rating Eas

33 mJ

Number Of Elements

2

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

2004

Voltage Rated Dc

20V

Montaj

Surface Mount

Terminal Kaplaması

Matte Tin (Sn)

Turn Off Delay Time

36 ns

Gate Charge Qg Max Vgs

26nC @ 4.5V

Seri

HEXFET®

Fabrika Tedarik Süresi

12 Weeks

Reach Svhc

No SVHC

Kılıf / Paket

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Fall Time Typ

16 ns

Uzunluk

3mm

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Breakdown Voltage

20V

JESD-609 Kodu

e3

Turn On Delay Time

8.5 ns

Montaj Tipi

Surface Mount

Pulsed Drain Currentmax Idm

40A

Genişlik

3mm

Nominal Vgs

1.2 V

Gate To Source Voltage Vgs

12V

Fet Feature

Standard

Parça Durumu

Active

Fet Type

2 N-Channel (Dual)

Continuous Drain Current Id

5.4A

Terminal Sayısı

8

Operating Mode

ENHANCEMENT MODE

Akım Değeri

5.4A

Input Capacitance Ciss Max Vds

1310pF @ 15V

Element Configuration

Dual

Yükseklik

860μm

Rds On Max Id Vgs

30m Ω @ 5.4A, 4.5V

Threshold Voltage

1.2V

Ambalaj

Tape & Reel (TR)

ECCN Kodu

EAR99

Transistor Element Material

SILICON