IRF7380TRPBF

Teknik Özellikler

Avalanche Energy Rating Eas

75 mJ

Number Of Elements

2

Yayın Yılı

2008

Voltage Rated Dc

80V

Montaj

Surface Mount

RoHS Durumu

ROHS3 Compliant

Gate Charge Qg Max Vgs

23nC @ 10V

Turn Off Delay Time

41 ns

Seri

HEXFET®

Reach Svhc

No SVHC

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Fabrika Tedarik Süresi

12 Weeks

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Drain To Source Breakdown Voltage

80V

Fall Time Typ

17 ns

Uzunluk

4.9784mm

Tepe Reflow Süresi (maks. sn)

30

JESD-609 Kodu

e3

Turn On Delay Time

9 ns

Montaj Tipi

Surface Mount

Genişlik

3.9878mm

Nominal Vgs

4 V

Parça Durumu

Active

Fet Type

2 N-Channel (Dual)

Fet Feature

Logic Level Gate

Continuous Drain Current Id

3.6A

Gate To Source Voltage Vgs

20V

Terminal Sayısı

8

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Akım Değeri

3.6A

Element Configuration

Dual

Yükseklik

1.4986mm

Input Capacitance Ciss Max Vds

660pF @ 25V

Rds On Max Id Vgs

73m Ω @ 2.2A, 10V

Threshold Voltage

4V

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Ambalaj

Tape & Reel (TR)