IRF7379PBF

Teknik Özellikler

Input Capacitance Ciss Max Vds

520pF @ 25V

Yükseklik

1.4986mm

Rds On Max Id Vgs

45m Ω @ 5.8A, 10V

Threshold Voltage

1V

Ambalaj

Tube

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Operating Mode

ENHANCEMENT MODE

Akım Değeri

5.8A

Rise Time

17ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Dual Supply Voltage

30V

Power Dissipation

2.5W

Radyasyon Dayanımı

No

Terminal

SMD/SMT

Pin Sayısı

8

Vgsth Max Id

1V @ 250μA

Max Power Dissipation

2.5W

Additional Feature

AVALANCHE RATED, ULTRA LOW RESISTANCE

Terminal Formu

GULL WING

Kurşunsuz

Lead Free

Temel Parça No

IRF7379PBF

Seri

HEXFET®

Reach Svhc

No SVHC

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Fall Time Typ

18 ns

Uzunluk

4.9784mm

Drain To Source Breakdown Voltage

30V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Elements

2

RoHS Durumu

RoHS Compliant

Yayın Yılı

2004

Montaj

Surface Mount

Turn Off Delay Time

25 ns

Gate Charge Qg Max Vgs

25nC @ 10V

Drainsource On Resistancemax

0.045Ohm

Row Spacing

6.3 mm

Gate To Source Voltage Vgs

20V

Fet Feature

Standard