IRF7351PBF

Teknik Özellikler

Input Capacitance

1.33nF

Gate Charge Qg Max Vgs

36nC @ 10V

Turn Off Delay Time

17 ns

RoHS Durumu

ROHS3 Compliant

Drain To Source Voltage Vdss

60V

Yayın Yılı

2006

Montaj

Surface Mount

Number Of Elements

2

Fall Time Typ

6.7 ns

Uzunluk

4.9784mm

Drain To Source Breakdown Voltage

60V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Maks. Çalışma Sıcaklığı

150°C

Ambalaj

Tube

Fabrika Tedarik Süresi

15 Weeks

Threshold Voltage

4V

Rds On Max Id Vgs

17.8mOhm @ 8A, 10V

Reach Svhc

No SVHC

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Input Capacitance Ciss Max Vds

1330pF @ 30V

Seri

HEXFET®

Element Configuration

Dual

Yükseklik

1.4986mm

Kurşunsuz

Lead Free

Temel Parça No

IRF7351PBF

Nominal Vgs

4 V

Montaj Tipi

Surface Mount

Genişlik

3.9878mm

Vgsth Max Id

4V @ 50μA

Turn On Delay Time

5.1 ns

Max Power Dissipation

2W

Recovery Time

30 ns

Drain To Source Resistance

17.8mOhm

Pin Sayısı

8

Current Continuous Drain Id25

8A

Rds On Max

17.8 mΩ

Radyasyon Dayanımı

No

Gate To Source Voltage Vgs

20V

Fet Type

2 N-Channel (Dual)

Parça Durumu

Discontinued