IRF7341GTRPBF

Teknik Özellikler

Ds Breakdown Voltagemin

55V

Terminal Sayısı

8

Transistor Application

SWITCHING

Çalışma Sıcaklığı

-55°C~175°C TJ

Power Max

2.4W

Fet Feature

Standard

Parça Durumu

Active

Fet Type

2 N-Channel (Dual)

Continuous Drain Current Id

5.1A

Terminal Formu

GULL WING

Vgsth Max Id

1V @ 250μA (Min)

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Max Power Dissipation

2.4W

Additional Feature

ULTRA LOW RESISTANCE

Montaj Tipi

Surface Mount

Pulsed Drain Currentmax Idm

42A

Ambalaj

Tape & Reel (TR)

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Seri

HEXFET®

Input Capacitance Ciss Max Vds

780pF @ 25V

Jedec95 Code

MS-012AA

Fabrika Tedarik Süresi

12 Weeks

Rds On Max Id Vgs

50m Ω @ 5.1A, 10V

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Gate Charge Qg Max Vgs

44nC @ 10V

Drainsource On Resistancemax

0.05Ohm

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Number Of Elements

2

Avalanche Energy Rating Eas

140 mJ

Operating Mode

ENHANCEMENT MODE

Drain To Source Voltage Vdss

55V

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

2005

Jesd30 Code

R-PDSO-G8

Montaj

Surface Mount