IRF7331PBF

Teknik Özellikler

Çalışma Sıcaklığı

-55°C~150°C TJ

Power Max

2W

Drain Currentmax Abs Id

7A

Fet Feature

Logic Level Gate

Parça Durumu

Discontinued

Fet Type

2 N-Channel (Dual)

Ds Breakdown Voltagemin

20V

Current Continuous Drain Id25

7A

Terminal Sayısı

8

Transistor Application

SWITCHING

Vgsth Max Id

1.2V @ 250μA

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Qualification Status

Not Qualified

Yüzey Montaj

YES

Montaj Tipi

Surface Mount

Power Dissipationmax Abs

2W

Temel Parça No

IRF7331PBF

Terminal Formu

GULL WING

Jedec95 Code

MS-012AA

Seri

HEXFET®

Input Capacitance Ciss Max Vds

1340pF @ 16V

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Rds On Max Id Vgs

30m Ω @ 7A, 4.5V

Ambalaj

Tube

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Number Of Elements

2

Operating Mode

ENHANCEMENT MODE

Drain To Source Voltage Vdss

20V

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PDSO-G8

Yayın Yılı

2004

Gate Charge Qg Max Vgs

20nC @ 4.5V

Drainsource On Resistancemax

0.03Ohm

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE