IRF7329TRPBF

Teknik Özellikler

Montaj

Surface Mount

Voltage Rated Dc

-12V

Yayın Yılı

2004

Drain To Source Voltage Vdss

12V

RoHS Durumu

ROHS3 Compliant

Akım Değeri

-9.2A

Operating Mode

ENHANCEMENT MODE

Number Of Elements

2

Drainsource On Resistancemax

0.017Ohm

Turn Off Delay Time

340 ns

Gate Charge Qg Max Vgs

57nC @ 4.5V

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Rds On Max Id Vgs

17m Ω @ 9.2A, 4.5V

Fabrika Tedarik Süresi

12 Weeks

Yükseklik

1.4986mm

Element Configuration

Dual

Input Capacitance Ciss Max Vds

3450pF @ 10V

Seri

HEXFET®

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Drain To Source Breakdown Voltage

-12V

Uzunluk

4.9784mm

Fall Time Typ

260 ns

Transistor Element Material

SILICON

Ambalaj

Tape & Reel (TR)

Genişlik

3.9878mm

Montaj Tipi

Surface Mount

Max Power Dissipation

2W

Turn On Delay Time

10 ns

Vgsth Max Id

900mV @ 250μA

Temel Parça No

IRF7329PBF

Kurşunsuz

Lead Free

Terminal Formu

GULL WING

Continuous Drain Current Id

9.2A

Fet Feature

Logic Level Gate

Parça Durumu

Active

Fet Type

2 P-Channel (Dual)

Gate To Source Voltage Vgs

8V

Power Dissipation

2W

Çalışma Sıcaklığı

-55°C~150°C TJ