IRF7328TRPBF

Teknik Özellikler

Turn Off Delay Time

198 ns

Gate Charge Qg Max Vgs

78nC @ 10V

Row Spacing

6.3 mm

Number Of Elements

2

Montaj

Surface Mount

Voltage Rated Dc

-30V

Yayın Yılı

2004

Drain To Source Voltage Vdss

30V

RoHS Durumu

ROHS3 Compliant

Drain To Source Breakdown Voltage

-30V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Nem Hassasiyeti (MSL)

1 (Unlimited)

Uzunluk

4.9784mm

Fall Time Typ

98 ns

Seri

HEXFET®

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Reach Svhc

No SVHC

Fabrika Tedarik Süresi

12 Weeks

Nominal Vgs

-2.5 V

Turn On Delay Time

13 ns

JESD-609 Kodu

e3

Genişlik

3.9878mm

Montaj Tipi

Surface Mount

Terminal Sayısı

8

Current Continuous Drain Id25

8A

Recovery Time

56 ns

Transistor Application

SWITCHING

Continuous Drain Current Id

-8A

Fet Type

2 P-Channel (Dual)

Parça Durumu

Active

Fet Feature

Logic Level Gate

Gate To Source Voltage Vgs

20V

Operating Mode

ENHANCEMENT MODE

Akım Değeri

-8A

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Ambalaj

Tape & Reel (TR)

Contact Plating

Tin

Yükseklik

1.75mm

Element Configuration

Dual