IRF7319TRPBF

Teknik Özellikler

Operating Mode

ENHANCEMENT MODE

Akım Değeri

6.5A

Yükseklik

1.4986mm

Input Capacitance Ciss Max Vds

650pF @ 25V

Rds On Max Id Vgs

29m Ω @ 5.8A, 10V

Threshold Voltage

1V

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Ambalaj

Tape & Reel (TR)

Contact Plating

Tin

Max Power Dissipation

2W

Vgsth Max Id

1V @ 250μA

Additional Feature

AVALANCHE RATED, ULTRA LOW RESISTANCE

Terminal Formu

GULL WING

Temel Parça No

IRF7319PBF

Kurşunsuz

Contains Lead, Lead Free

Çalışma Sıcaklığı

-55°C~150°C TJ

Rise Time

13ns

Power Dissipation

2W

Radyasyon Dayanımı

No

Direnç

29mOhm

Pin Sayısı

8

Number Of Elements

2

Yayın Yılı

1997

Montaj

Surface Mount

RoHS Durumu

ROHS3 Compliant

Turn Off Delay Time

34 ns

Gate Charge Qg Max Vgs

33nC @ 10V

Row Spacing

6.3 mm

Seri

HEXFET®

Reach Svhc

No SVHC

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Fabrika Tedarik Süresi

12 Weeks

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Drain To Source Breakdown Voltage

30V

Fall Time Typ

32 ns

Uzunluk

4.9784mm

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Montaj Tipi

Surface Mount