IRF7309TRPBF

Teknik Özellikler

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

JESD-609 Kodu

e3

Genişlik

4.05mm

Pulsed Drain Currentmax Idm

16A

Montaj Tipi

Surface Mount

Nominal Vgs

1 V

Terminal Pozisyonu

DUAL

Continuous Drain Current Id

4A

Fet Type

N and P-Channel

Parça Durumu

Active

Fet Feature

Standard

Gate To Source Voltage Vgs

20V

Terminal Sayısı

8

Current Continuous Drain Id25

4A 3A

Transistor Application

SWITCHING

Number Of Elements

2

Montaj

Surface Mount

Yayın Yılı

2001

RoHS Durumu

ROHS3 Compliant

Gate Charge Qg Max Vgs

25nC @ 4.5V

Turn Off Delay Time

25 ns

Row Spacing

6.3 mm

Seri

HEXFET®

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Reach Svhc

No SVHC

Fabrika Tedarik Süresi

12 Weeks

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Drain To Source Breakdown Voltage

30V

Uzunluk

4.9784mm

Max Power Dissipation

1.4W

Vgsth Max Id

1V @ 250μA

Additional Feature

ULTRA LOW RESISTANCE

Kurşunsuz

Lead Free

Temel Parça No

IRF7309PBF

Terminal Formu

GULL WING

Power Dissipation

1.4W

Çalışma Sıcaklığı

-55°C~150°C TJ

Drain Currentmax Abs Id

4A

Radyasyon Dayanımı

No