IRF7306TRPBF

Teknik Özellikler

Montaj

Surface Mount

Yayın Yılı

1997

Voltage Rated Dc

-30V

Drain To Source Voltage Vdss

30V

RoHS Durumu

ROHS3 Compliant

Number Of Elements

2

Row Spacing

6.3 mm

Gate Charge Qg Max Vgs

25nC @ 10V

Turn Off Delay Time

25 ns

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Reach Svhc

No SVHC

Fabrika Tedarik Süresi

12 Weeks

Seri

HEXFET®

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Drain To Source Breakdown Voltage

-30V

Uzunluk

4.9784mm

Fall Time Typ

18 ns

Genişlik

4.05mm

Pulsed Drain Currentmax Idm

14A

Montaj Tipi

Surface Mount

Turn On Delay Time

11 ns

JESD-609 Kodu

e3

Nominal Vgs

-1 V

Continuous Drain Current Id

-3.6A

Fet Type

2 P-Channel (Dual)

Parça Durumu

Active

Fet Feature

Logic Level Gate

Gate To Source Voltage Vgs

20V

Transistor Application

SWITCHING

Recovery Time

80 ns

Terminal Sayısı

8

Current Continuous Drain Id25

3.6A

Akım Değeri

-3.6A

Operating Mode

ENHANCEMENT MODE

Threshold Voltage

-1V

Rds On Max Id Vgs

100m Ω @ 1.8A, 10V

Yükseklik

1.75mm

Element Configuration

Dual

Input Capacitance Ciss Max Vds

440pF @ 25V