IRF7303TRPBF

Teknik Özellikler

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

1997

Voltage Rated Dc

30V

Montaj

Surface Mount

Terminal Kaplaması

Matte Tin (Sn)

Number Of Elements

2

Gate Charge Qg Max Vgs

25nC @ 10V

Turn Off Delay Time

22 ns

Fabrika Tedarik Süresi

12 Weeks

Reach Svhc

No SVHC

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Seri

HEXFET®

Fall Time Typ

7.7 ns

Uzunluk

4.9784mm

Tepe Reflow Süresi (maks. sn)

30

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Drain To Source Breakdown Voltage

30V

Montaj Tipi

Surface Mount

Genişlik

3.9878mm

JESD-609 Kodu

e3

Turn On Delay Time

6.8 ns

Nominal Vgs

1 V

Gate To Source Voltage Vgs

20V

Parça Durumu

Active

Fet Type

2 N-Channel (Dual)

Fet Feature

Standard

Continuous Drain Current Id

4.9A

Recovery Time

71 ns

Transistor Application

SWITCHING

Terminal Sayısı

8

Akım Değeri

4.9A

Operating Mode

ENHANCEMENT MODE

Rds On Max Id Vgs

50m Ω @ 2.4A, 10V

Threshold Voltage

1V

Input Capacitance Ciss Max Vds

520pF @ 25V

Element Configuration

Dual

Yükseklik

1.4986mm

Ambalaj

Tape & Reel (TR)

Transistor Element Material

SILICON